CGHV40100 Datasheet, PDF (1/11 Pages) Cree, Inc – 100 W, DC - 4.0 GHz, 50 V, GaN HEMT

CGHV40100
100 W, DC - 4.0 GHz, 50 V, GaN HEMT
Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGHV40100, operating from a 50 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efficiency, high gain and
wide bandwidth capabilities making the CGHV40100 ideal for linear and
compressed amplifier circuits. The transistor is available in a 2-lead flange
and pill package.
P^PN^ac_{: C}^ka_G^g_H^e_V^T₄^y₀^p₁^e₀^s₀^: _F⁴⁴_&⁰_C¹⁹_G³_H^&_V4⁴₀⁴₁0₀2₀0_P6
Typical Performance Over 500 MHz - 2.5 GHz (T_C = 25˚C), 50 V
Parameter
500 MHz
1.0 GHz
1.5 GHz
Small Signal Gain
17.6
16.9
17.7
Saturated Output Power
147
100
141
Drain Efficiency @ P_SAT
68
56
58
Input Return Loss
6
5.1
10.5
Note:
Measured CW in the CGHV40100F-AMP application circuit.
2.0 GHz
17.5
116
54
5.5
2.5 GHz
14.8
112
54
8.8
Units
dB
W
%
dB
Features
• Up to 4 GHz Operation
• 100 W Typical Output Power
• 17.5 dB Small Signal Gain at 2.0 GHz
• Application Circuit for 0.5 - 2.5 GHz
• 55 % Efficiency at P_SAT
• 50 V Operation
Subject to change without notice.
www.cree.com/rf
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