CGHV40050F Datasheet, PDF (1/11 Pages) Cree, Inc – 50 W, DC - 4.0 GHz, 50 V, GaN HEMT

CGHV40050
50 W, DC - 4.0 GHz, 50 V, GaN HEMT
Cree’s CGHV40050 is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGHV40050, operating from a 50 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications up to 4 GHz. The reference HPA design in the
datasheet operates from 800 MHz to 2 GHz operation instantaneously.
It is a demonstration amplifier to showcase the CGHV40050’s high
efficiency, high gain and wide bandwidth capabilities. The device can be
used for a range of applications from narrow band UHF, L and S Band as
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well as multi-octave bandwidth amplifiers up to 4 GHz. The transistor is available in a 2-lead flange and
pill package.
Typical Performance Over 800 MHz - 2.5 GHz (T_C = 25˚C), 50 V
Parameter
800 MHz
1.2 GHz
1.4 GHz
Small Signal Gain
17.6
16.9
17.7
Saturated Output Power
65
70
63
Drain Efficiency @ P_SAT
63
63
60
Input Return Loss
5
5.5
4.2
Note:
Measured CW in the CGHV40050F-AMPapplication circuit.
1.8 GHz
17.5
77
53
8
2.0 GHz
14.8
60
52
5
Units
dB
W
%
dB
Features
• Up to 4 GHz Operation
• 77 W Typical Output Power
• 17.5 dB Small Signal Gain at 1.8 GHz
• Application Circuit for 0.8 - 2.0 GHz
• 53 % Efficiency at P_SAT
• 50 V Operation
Subject to change without notice.
www.cree.com/rf
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