CGHV40030 Datasheet, PDF (1/11 Pages) Cree, Inc – 30 W, DC - 6 GHz, 50V, GaN HEMT

CGHV40030
30 W, DC - 6 GHz, 50V, GaN HEMT
Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities.
The device can be deployed for L, S and C-Band amplifier applications. The datasheet
specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030 operates on a 50
volt rail circuit while housed in a 2-lead flange or pill package.
Package _{Type: 440P1N66: CaGnHdV44400013906}
Typical Performance 0.96 - 1.4 GHz (T_C = 25˚C) , 50 V
Parameter
0.96 GHz
1.1 GHz
Gain @ P_SAT
15.6
15.8
Saturated Output Power
29
30
Drain Efficiency @ P_SAT
62
74
Note:
Measured CW in the CGHV40030-AMP application circuit.
1.25 GHz
16.6
36
64
1.4 GHz
15.8
31
67
Units
dB
W
%
Features
• Up to 6 GHz Operation
• 30 W Typical Output Power
• 16 dB Gain at 1.2 GHz
• Application circuit for 0.96 - 1.4 GHz
• 70% Efficiency at P_SAT
• 50 V Operation
Subject to change without notice.
www.cree.com/rf
1