CGHV35400F Datasheet, PDF (1/11 Pages) Cree, Inc – 400 W, 2900 - 3500 MHz, 50-Ohm Input

CGHV35400F
400 W, 2900 - 3500 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package, type 440210.
PN:
Package
CGHV35400F
Type: ₄₄₀₂₁₅
Typical Performance Over 2.9-3.5 GHz (T_C = 85˚C) of Demonstration Amplifier
Parameter
2.9 GHz
3.2 GHz
3.5 GHz
Units
Output Power
375
400
360
W
Gain
9.8
10
9.6
dB
Drain Efficiency
66
59
57
%
Note:
Measured in the CGHV35400F-AMP application circuit, under 500 μs pulse width, 10% duty cycle, P_IN = 46 dBm.
Features
• 2.9 - 3.5 GHz Operation
• 400 W Typical Output Power
• 10.5 dB Power Gain
• 60% Typical Drain Efficiency
• 50 Ohm Internally Matched
• <0.3 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/rf
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