CGHV35150 Datasheet, PDF (1/10 Pages) Cree, Inc – 150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems

CGHV35150
150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems
Cree’s CGHV35150 is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV35150 ideal for 2.9 - 3.5 GHz S-Band radar amplifier
applications. The transistor is supplied in a ceramic/metal flange and pill package.
PNPa: _{CckGaHgVe3T5y1p5e0: F44/0C1G9H3V/3454105200P6}
Typical Performance 3.1 - 3.5 GHz (T_C = 85˚C)
Parameter
3.1 GHz
3.2 GHz
Output Power
180
180
Gain
13.5
13.5
Drain Efficiency
50
49
3.3 GHz
180
13.5
50
3.4 GHz
170
13.3
49
3.5 GHz
150
12.7
48
Note: Measured in the CGHV35150-AMP application circuit, under 300 µs pulse width, 20% duty cycle, P_IN = 39 dBm
Units
dB
dBc
%
Features:
• Rated Power = 150 W @ T_CASE = 85°C
• Operating Frequency = 2.9 - 3.5 GHz
• Transient 100 µsec - 300 µsec @ 20% Duty Cycle
• 13.5 dB Power Gain @ T_CASE = 85°C
• 50 % Typical Drain Efficiency @ T_CASE = 85°C
• Input Matched
• <0.3 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/rf
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