CGHV35060MP Datasheet, PDF (1/6 Pages) Cree, Inc – 60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations

PRELIMINARY

CGHV35060MP
60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations
Cree’s CGHV35060MP is a 60W input matched, gallium nitride (GaN) high
electron mobility transistor (HEMT) optimized for S Band performance. The
CGHV35060MP is suitable for typical bands of 2.7-3.1GHz and 3.1-3.5GHz
while the input matched transistor provides optimal gain, power and efficiency
in a small 6.5mm x 4.4mm plastic surface mount (SMT) package. The
typical performance plots in the datasheet are derived with CGHV35060MP
matched into a 3.1-3.5GHz high power amplifier.
PN: _CGHV35060MP
Typical Performance Over 3.1 - 3.5 GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
3.1 GHz
3.3 GHz
3.5 GHz
Units
Gain
14.5
14.3
13.8
dB
Output Power
88
88
75
W
Drain Efficiency
61
67
64
%
Note:
Measured in the CGHV35060MP-TB amplifier circuit, under 100 μs pulse width, 10% duty cycle, P_IN = 35 dBm.
Features
• Reference design amplifier 3.1 - 3.5 GHz
• 75W Typical output power
• 14.5 dB power gain
• 67% Drain efficiency
• Internally pre-matched on input, unmatched output
Subject to change without notice.
www.cree.com/rf
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