CGHV31500F Datasheet, PDF (1/10 Pages) Cree, Inc – 500 W, 2700 - 3100 MHz, 50-Ohm Input

PRELIMINARY
CGHV31500F
500 W, 2700 - 3100 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV31500F ideal for 2.7 - 3.1 GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package, type 440217.
PN:
Package
CGHV31500F
Type: ₄₄₀₂₁₇
Typical Performance Over 2.7-3.1 GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
2.7 GHz
2.9 GHz
3.1 GHz
Units
Output Power
665
705
645
W
Gain
13.2
13.5
13.1
dB
Drain Efficiency
66
68
62
%
Note:
Measured in the CGHV31500F-AMP application circuit, under 500 μs pulse width, 10% duty cycle, P_IN = 45 dBm.
Features
• 2.7 - 3.1 GHz Operation
• 675 W Typical Output Power
• 13.3 dB Power Gain
• 66% Typical Drain Efficiency
• 50 Ohm Internally Matched
• <0.3 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/rf
1