CGHV27200_15 Datasheet, PDF (1/12 Pages) Cree, Inc – 200 W, 2500-2700 MHz, GaN HEMT for LTE

CGHV27200
200 W, 2500-2700 MHz, GaN HEMT for LTE
Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HEMT)
is designed specifically for high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV27200 ideal for 2.5-2.7 GHz LTE and BWA amplifier applications.
The transistor is input matched and supplied in a ceramic/metal flange package.
PNPa: _{CckGaHgVe2T7y2p0e0: F44a0n1d6C2GaHndV2474200106P1}
Typical Performance Over 2.5 - 2.7 GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
2.5 GHz
2.6 GHz
2.7 GHz
Units
Gain @ 46 dBm
15.0
16.0
16.0
dB
ACLR @ 46 dBm
-36.5
-37.5
-37.0
dBc
Drain Efficiency @ 46 dBm
29.0
28.5
29.0
%
Note:
Measured in the CGHV27200-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Features
• 2.5 - 2.7 GHz Operation
• 16 dB Gain
• -37 dBc ACLR at 40 W P_AVE
• 29 % Efficiency at 40 W P_AVE
• High Degree of DPD Correction Can be Applied
Subject to change without notice.
www.cree.com/rf
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