CGHV27100 Datasheet, PDF (1/11 Pages) Cree, Inc – 100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE

CGHV27100
100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE
Cree’s CGHV27100 is a gallium nitride (GaN) high electron mobility transistor (HEMT)
is designed specifically for high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV27100 ideal for 2.5 - 2.7 GHz LTE, 4G Telecom and BWA
amplifier applications. The transistor is input matched and supplied in a ceramic/
metal pill and flange packages.
PNPa: _{CckGaHgVe2T7y1p0e0: F44a0n1d6C2GaHndV2474100106P1}
Typical Performance Over 2.5 - 2.7 GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
2.5 GHz
2.6 GHz
2.7 GHz
Units
Gain @ 44 dBm
18.1
18.0
17.9
dB
ACLR @ 44 dBm
-37.0
-37.0
-37.0
dBc
Drain Efficiency @ 44 dBm
34.0
33.5
32.0
%
Note:
Measured in the CGHV27100-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,
PAR = 7.5 dB @ 0.01% Probability on CCDF, V_DD = 50 V, I_DS = 500 mA.
Features
• 2.5 - 2.7 GHz Operation
• 18.0 dB Gain
• -37 dBc ACLR at 25 W P_AVE
• 33 % Efficiency at 25 W P_AVE
• High Degree of DPD Correction Can be Applied
Subject to change without notice.
www.cree.com/rf
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