CGHV27060MP Datasheet, PDF (1/8 Pages) Cree, Inc – 60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications

PRELIMINARY

CGHV27060MP
60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications
Cree’s CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor
(HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm. The transistor is a
broadband device with no internal input or output match which allows for the agility
to apply to a wide range of frequencies from UHF thru 2.7GHz. The CGHV27060MP
makes for an excellent transistor for pulsed applications at UHF, L Band or low S
Band (<2.7GHz). Additionally, the transistor is well suited for LTE micro basestation
amplifiers in the power class of 10 to 15W average power in high efficiency topologies
such as Class A/B, F or Doherty amplifiers.
PN: _CGHV27060MP
Typical Performance Over 2.5 - 2.7 GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
2.5 GHz
2.6 GHz
2.7 GHz
Gain @ 41.5 dBm Avg P_OUT
18.25
18.5
18.25
ACLR @ 41.5 dBm Avg P_OUT
-34
-37
-38
Drain Efficiency @ 41.5 dBm Avg P_OUT
33
35
33
Note:
Measured in the CGHV27060MP-TB amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,
PAR = 7.5 dB @ 0.01% Probability on CCDF, V_DD = 50 V, I_DS = 125 mA.
Units
dB
dBc
%
Typical Performance Over 2.5 - 2.7 GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
2.5 GHz
2.6 GHz
2.7 GHz
Gain
16.5
16.3
16.2
Output Power
84
82
79
Drain Efficiency
71
69
65
Note:
Measured in the CGHV27060MP-TB amplifier circuit, under pulse width 100 μs, 10% duty cycle, P_IN = 33 dBm.
Units
dB
W
%
Features - WCDMA
• 2.5 - 2.7 GHz Reference Design Amplifier
• 18.5 dB Gain at 14 W P_AVE
• -35 dBc ACLR at 14 W P_AVE
• 35% Efficiency at 14 W P_AVE
• High Degree of DPD Correction Can be Applied
Features - Pulsed
• 16.5 dB Gain at Pulsed P_SAT
• 70% Efficiency at Pulsed P_SAT
• 80W at Pulsed P_SAT
Subject to change without notice.
www.cree.com/rf
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