CGHV27015S Datasheet, PDF (1/12 Pages) Cree, Inc – 15 W, DC - 6.0 GHz, 50 V, GaN HEMT

CGHV27015S
15 W, DC - 6.0 GHz, 50 V, GaN HEMT
Cree’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV27015S ideal for LTE, 4G Telecom and BWA amplifier applications. The
CGHV27015S GaN HEMT device is unmatched so it is suitable for power amplifier applications
from 10MHz through 6000 MHz, such as tactical communications, CATV, UAV data links, as
well as a driver stage amplifier for RADAR, EW, and SatCom devices. At a Vdd of 50 V, the device
provide 2.5W of average power or 15W of peak power. At a Vdd of 28V, the device provides 1S
of average power and 7W of peak power. The transistor is available in a 3mm x 4mm, surface
mount,
duPaalc-fklaaPtg-Ne:TCyGpHe:V32x740D1F5NS
no-lead (DFN) package.
Typical Performance 2.4-2.7 GHz (T_C = 25˚C) , 50 V
Parameter
2.4 GHz
Small Signal Gain
23
2.5 GHz
22
Adjacent Channel Power @ P_OUT = 2.5 W
Drain Efficiency @ P_OUT = 2.5 W
Input Return Loss
-36.7
35.9
-9.312
-40.7
33.5
-9.6
Note:
Measured in the CGHV27015S-AMP1 application circuit.
Under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH.
2.6 GHz
21.7
-42.4
30.4
-8.6
2.7 GHz
21.2
-42.5
30.2
-7.8
Units
dB
dBc
%
dB
Features for 50 V in CGHV27015S-AMP1
• 2.4 - 2.7 GHz Operation
• 15 W Typical Output Power
• 21 dB Gain at 2.5 W P_AVE
• -38 dBc ACLR at 2.5 W P_AVE
• 32% efficiency at 2.5 W P_AVE
• High degree of APD and DPD correction can be applied
Subject to change without notice.
www.cree.com/rf
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