CGHV22200 Datasheet, PDF (1/13 Pages) Cree, Inc – 200 W, 1800-2200 MHz, GaN HEMT for LTE

CGHV22200
200 W, 1800-2200 MHz, GaN HEMT for LTE
Cree’s CGHV22200 is a gallium nitride (GaN) high electron mobility transistor (HEMT)
is designed specifically for high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV22200F ideal for 1.8 - 2.2 GHz LTE, 4G Telecom and BWA
amplifier applications. The transistor is input matched and supplied in a ceramic/
metal flange package.
PNPa: _{CckGaHgVe2T2y2p0e0: F44a0n1d6C2GaHndV2424200106P1}
Typical Performance Over 1.8 - 2.2 GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
1.8 GHz
2.0 GHz
2.2 GHz
Units
Gain @ 47 dBm
16.6
19.2
18.1
dB
ACLR @ 47 dBm
-37.4
-37.4
-35.6
dBc
Drain Efficiency @ 47 dBm
31.5
31.9
34.8
%
Note:
Measured in the CGHV22200-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping,
PAR = 7.5 dB @ 0.01% Probability on CCDF. I_DS = 1.0 A
Features
• 1.8 - 2.2 GHz Operation
• 18 dB Gain
• -35 dBc ACLR at 50 W P_AVE
• 31-35 % Efficiency at 50 W P_AVE
• High Degree of DPD Correction Can be Applied
Subject to change without notice.
www.cree.com/rf
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