CGHV1J070D Datasheet, PDF (1/9 Pages) Cree, Inc – 70 W, 18.0 GHz, GaN HEMT Die

CGHV1J070D
70 W, 18.0 GHz, GaN HEMT Die
Cree’s CGHV1J070D is a high voltage gallium nitride (GaN) High
Electron Mobility Transistor (HEMT) on a silicon carbide substrate,
using a 0.25 μm gate length fabrication process. This GaN-on-SiC
product offers superior high frequency, high efficiency features. It is
ideal for a variety of applications operating from 10 MHz to 18 GHz at
40 V with a high breakdown voltage.
PN: _CGHV1J070D
FEATURES
• 17 dB Typ. Small Signal Gain at 10 GHz
• 60% Typ. PAE at 10 GHz
• 70 W Typical Psat
• 40 V Operation
• Up to 18GHz Operation
APPLICATIONS
• Satellite Communications
• PTP Communications Links
• Marine Radar
• Pleasure Craft Radar
• Port Vessel Traffic Services
• Broadband Amplifiers
• High Efficiency Amplifiers
Packaging Information
• Bare die are shipped in Gel-Pak® containers or on tape.
• Non-adhesive tacky membrane immobilizes die during
shipment.
Subject to change without notice.
www.cree.com/rf
1