CGHV1J025D Datasheet, PDF (1/9 Pages) Cree, Inc – 25 W, 18.0 GHz, GaN HEMT Die

CGHV1J025D
25 W, 18.0 GHz, GaN HEMT Die
Cree’s CGHV1J025D is a high voltage gallium nitride (GaN) High Electron
Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm
gate length fabrication process. This GaN-on-SiC product offers superior high
frequency, high efficiency features. It is ideal for a variety of applications
operating from 10 MHz to 18 GHz at 40 V with a high breakdown voltage.
PN: _CGHV1J025D
FEATURES
• 17 dB Typ. Small Signal Gain at 10 GHz
• 60% Typ. PAE at 10 GHz
• 25 W Typical Psat
• 40 V Operation
• Up to 18GHz Operation
APPLICATIONS
• Satellite Communications
• PTP Communications Links
• Marine Radar
• Pleasure Craft Radar
• Port Vessel Traffic Services
• Broadband Amplifiers
• High Efficiency Amplifiers
Packaging Information
• Bare die are shipped in Gel-Pak® containers or on tape.
• Non-adhesive tacky membrane immobilizes die during
shipment.
Subject to change without notice.
www.cree.com/rf
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