CGHV1F025S Datasheet, PDF (1/9 Pages) Cree, Inc – 25 W, DC - 15 GHz, 40V, GaN HEMT

CGHV1F025S
25 W, DC - 15 GHz, 40V, GaN HEMT
Cree’s CGHV1F025S is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT) designed specifically for high efficiency, high gain
and wide bandwidth capabilities. The device can be deployed for L, S, C, X and
Ku-Band amplifier applications. The datasheet specifications are based on a
X-Band (8.9 - 9.6 GHz) amplifier. The CGHV1F025S operates on a 40 volt rail
circuit while housed in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN)
package. Under reduced power, the transistor can operate below 40V to as low
as 20V V_DD, maintaining high gain and efficiency.
Packag_{PeN:TyCpGeH:V31xF40D25FSN}
Typical Performance 8.9 - 9.6 GHz (T_C = 25˚C) , 40 V
Parameter
8.9 GHz
9.2 GHz
9.4 GHz
Output Power @ P_IN = 37 dBm
24
29
27
Drain Efficiency @ P_IN = 37 dBm
43.5
48.5
48
Gain @ P_IN = 0 dBm
10.7
11.6
11.3
Note:
Measured in the CGHV1F025S-TB1 application circuit. Pulsed 100 µs 10% duty.
9.6 GHz
25
46
11.1
Units
W
%
dB
Features
• Up to 15 GHz Operation
• 25 W Typical Output Power
• 11 dB Gain at 9.4 GHz
• Application circuit for 8.9 - 9.6 GHz
Subject to change without notice.
www.cree.com/rf
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