CGHV1F006S Datasheet, PDF (1/22 Pages) Cree, Inc – 6 W, DC - 18 GHz, 40V, GaN HEMT

CGHV1F006S
6 W, DC - 18 GHz, 40V, GaN HEMT
Cree’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities.
The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datasheet
specifications are based on a C-Band (5.5 - 6.5 GHz) amplifier. Additional application
circuits are available for C-Band at 5.8 GHz - 7.2 GHz and X-Band at 7.9 - 8.4 GHz and 8.5 -
9.6 GHz. The CGHV1F006S operates on a 40 volt rail circuit while housed in a 3mm x 4mm,
surface mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can
operate below 40V to as low as 20V V_DD, maintaining high gain and efficiency.
PackaPgNe:TCyGpHe:V31xF40D0F6NS
Typical Performance 5.5-6.5 GHz (T_C = 25˚C) , 40 V
Parameter
5.5 GHz
Small Signal Gain
15.4
6.0 GHz
16.5
Output Power @ P_IN = 28 dBm
38.6
39.3
Drain Efficiency @ P_IN = 28 dBm
55
57
Note:
Measured in the CGHV1F006S-AMP application circuit. Pulsed 100 µs 10% duty.
6.5 GHz
17.8
39.0
52
Units
dB
dBm
%
Features for 40 V in CGHV1F006S-AMP
• Up to 18 GHz Operation
• 8 W Typical Output Power
• 17 dB Gain at 6.0 GHz
• 15 dB Gain at 9.0 GHz
• Application circuits for 5.8 - 7.2 GHz, 7.9 - 8.4 GHz, and 8.5 - 9.6 GHz.
• High degree of APD and DPD correction can be applied
Listing of Available Hardware Application Circuits / Demonstration Circuits
Application Circuit
CGHV1F006S-AMP1
CGHV1F006S-AMP2
CGHV1F006S-AMP3
CGHV1F006S-AMP4
Operating Frequency
5.85 - 7.2 GHz
7.9 - 8.4 GHz
8.5 - 9.6 GHz
4.9 - 5.9 GHz
Amplifier Class
Class A/B
Class A/B
Class A/B
Class A/B
Subject to change without notice.
www.cree.com/rf
Operating Voltage
40 V
40 V
40 V
20 V
1