CGHV14800 Datasheet, PDF (1/9 Pages) Cree, Inc – 800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems

CGHV14800
800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed
specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the
CGHV14800 ideal for 1.2 - 1.4 GHz pulsed L-Band radar amplifier applications, such as air traffic
control (ATC) radar, weather radar, penetration radars, antimissile system radars, target tracking
radars and long range survelliance radars. The GaN HEMT typically operates at 50 V, typically
deliverying >65% drain efficiency. The package options are ceramic/metal flange package.
Package
PN:
Type: ₄₄₀₁₁₇
CGHV14800F
Typical Performance Over 1.2-1.4 GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
1.2 GHz
1.25 GHz
1.3 GHz
1.35 GHz
Output Power
900
900
870
870
1.4 GHz
920
Units
W
Power Gain
14.5
14.5
14.0
14.0
14.0
dB
Drain Efficiency
68
67
67
63
62
%
Note:
Measured in the CGHV14800-AMP amplifier circuit, under 3 μs pulse width, 3% duty cycle, P_IN = 45 dBm.
Features
• Reference design amplifier 1.2 - 1.4 GHz Operation
• 800 W Minimum Output Power
• 14 dB Power Gain
• 69% Typical Drain Efficiency
• <0.3 dB Pulsed Amplitude Droop
• Internally input and output matched
Subject to change without notice.
www.cree.com/rf
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