CGHV14500 Datasheet, PDF (1/11 Pages) Cree, Inc – 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems

CGHV14500
500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
Cree’s CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed
specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the
CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. The transistor could
be utilized for band specific applications ranging from 800 through 1600 MHz. The package
options are ceramic/metal flange and pill package.
Package _{Type:P4N4:0C1G17H,V41440510303}
Typical Performance Over 1.2-1.4 GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
1.2 GHz
1.25 GHz
1.3 GHz
1.35 GHz
Output Power
545
540
530
530
1.4 GHz
530
Units
W
Gain
16.4
16.3
16.2
16.2
16.2
dB
Drain Efficiency
69
69
68
66
65
%
Note:
Measured in the CGHV14500-AMP amplifier circuit, under 500 μs pulse width, 10% duty cycle, P_IN = 41 dBm.
Features
• Reference design amplifier 1.2 - 1.4 GHz Operation
• FET tuning range UHF through 1800 MHz
• 530 W Typical Output Power
• 16 dB Power Gain
• 68% Typical Drain Efficiency
• <0.3 dB Pulsed Amplitude Droop
• Internally pre-matched on input, unmatched output
Subject to change without notice.
www.cree.com/rf
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