CGHV14250 Datasheet, PDF (1/11 Pages) Cree, Inc – 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems

CGHV14250
250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
Cree’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed
specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the
CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. The transistor could
be utilized for band specific applications ranging from UHF through 1800 MHz. The package
options are ceramic/metal flange and pill package.
Package _{Type:P4N4:0C1G62H,V41440215601}
Typical Performance Over 1.2-1.4 GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
1.2 GHz
1.25 GHz
1.3 GHz
1.35 GHz
Output Power
365
365
350
310
1.4 GHz
330
Units
W
Gain
18.6
18.6
18.4
17.9
18.2
dB
Drain Efficiency
80
80
77
74
76
%
Note:
Measured in the CGHV14250-AMP amplifier circuit, under 500 μs pulse width, 10% duty cycle, P_IN = 37 dBm.
Features
• Reference design amplifier 1.2 - 1.4 GHz Operation
• FET Tuning range UHF through 1800 MHz
• 330 W Typical Output Power
• 18 dB Power Gain
• 77% Typical Drain Efficiency
• <0.3 dB Pulsed Amplitude Droop
• Internally pre-matched on input, unmatched output
Subject to change without notice.
www.cree.com/rf
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