CGH60120D Datasheet, PDF (1/7 Pages) Cree, Inc – 120 W, 6.0 GHz, GaN HEMT Die

CGH60120D
120 W, 6.0 GHz, GaN HEMT Die
Cree’s CGH60120D is a gallium nitride
(GaN) High Electron Mobility Transistor
(HEMT). GaN has superior properties
compared to silicon or gallium arsenide, including higher
PN: _CGH60120D
breakdown voltage, higher saturated electron drift velocity, and higher thermal
conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.
FEATURES
APPLICATIONS
• 13 dB Typical Small Signal Gain at 4 GHz
• 12 dB Typical Small Signal Gain at 6 GHz
• 120 W Typical P_SAT
• 28 V Operation
• High Breakdown Voltage
• High Temperature Operation
• Up to 6 GHz Operation
• High Efficiency
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
Packaging Information
• Bare die are shipped in Gel-Pak® containers.
• Non-adhesive tacky membrane immobilizes die during
shipment.
Subject to change without notice.
www.cree.com/wireless
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