CGH60060D Datasheet, PDF (1/7 Pages) Cree, Inc – 60 W, 6.0 GHz, GaN HEMT Die

CGH60060D
60 W, 6.0 GHz, GaN HEMT Die
Cree’s CGH60060D is a gallium nitride (GaN) High Electron
Mobility Transistor (HEMT). GaN has superior properties
compared to silicon or gallium arsenide, including higher
breakdown voltage, higher saturated electron drift
velocity, and higher thermal conductivity. GaN HEMTs
offer greater power density and wider bandwidths
compared to Si and GaAs transistors.
PN: _CGH60060D
FEATURES
APPLICATIONS
• 13 dB Typical Small Signal Gain at 4 GHz
• 12 dB Typical Small Signal Gain at 6 GHz
• 60 W Typical P_SAT
• 28 V Operation
• High Breakdown Voltage
• High Temperature Operation
• Up to 6 GHz Operation
• High Efficiency
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
Packaging Information
• Bare die are shipped in Gel-Pak® containers.
• Non-adhesive tacky membrane immobilizes die during
shipment.
Subject to change without notice.
www.cree.com/wireless
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