CGH60030D Datasheet, PDF (1/8 Pages) Cree, Inc – 30 W, 6.0 GHz, GaN HEMT Die

CGH60030D
30 W, 6.0 GHz, GaN HEMT Die
Cree’s CGH60030D is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT). GaN has superior properties compared to
silicon or gallium arsenide, including higher breakdown voltage,
higher saturated electron drift velocity, and higher thermal
conductivity. GaN HEMTs offer greater power density and wider
bandwidths compared to Si and GaAs transistors.
PN: _CGH60030D
FEATURES
APPLICATIONS
• 15 dB Typical Small Signal Gain at 4 GHz
• 12 dB Typical Small Signal Gain at 6 GHz
• 30 W Typical P_SAT
• 28 V Operation
• High Breakdown Voltage
• High Temperature Operation
• Up to 6 GHz Operation
• High Efficiency
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
Packaging Information
• Bare die are shipped in Gel-Pak® containers.
• Non-adhesive tacky membrane immobilizes die during
shipment.
Subject to change without notice.
www.cree.com/wireless
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