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| CGH55030F2_12 Datasheet, PDF (1/10 Pages) Cree, Inc – 25 W, C-band, Unmatched, GaN HEMT | |||
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CGH55030F2 / CGH55030P2
25 W, C-band, Unmatched, GaN HEMT
Creeâs CGH55030F2/CGH55030P2 is a gallium nitride (GaN) high electron
mobility transistor (HEMT) designed specifically for high efficiency, high
gain and wide bandwidth capabilities, which makes the CGH55030F2/
CGH55030P2 ideal for C-band pulsed or CW saturated amplifiers. The
transistor is available in both screw-down, flange and solder-down,
pill packages. Based on appropriate external match adjustment, the
CGH55030F2/CGH55030P2 is suitable for applications up to 6 GHz.
PPNa:ckCaGgHe5T5y0p3e0:P424&01C9G6H&554043001F626
FEATURES
APPLICATIONS
⢠4.5 to 6.0 GHz Operation
⢠12 dB Small Signal Gain at 5.65 GHz
⢠30 W typical PSAT
⢠60 % Efficiency at PSAT
⢠28 V Operation
⢠2-Way Private Radio
⢠Broadband Amplifiers
⢠Cellular Infrastructure
⢠Test Instrumentation
⢠Class A, AB Amplifiers for Drivers and
Gain Blocks
Subject to change without notice.
www.cree.com/wireless
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