CGH55030F1 Datasheet, PDF (1/13 Pages) Cree, Inc – 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX

CGH55030F1 / CGH55030P1
30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth
capabilities, which makes the CGH55030F1/CGH55030P1 ideal for 5.5-5.8 GHz WiMAX
and BWA amplifier applications. The transistor is available in both screw-down, flange
and solder-down, pill packages. Based on appropriate external match adjustment, the
CGH55030F1/CGH55030P1 is suitable for 4.9 - 5.5 GHz applications as well.
PPNa: ^{cCkGaHge55T0y3p0eP: 414&01C9G6H&554043001F616}
Typical Performance Over 5.5-5.8GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
5.50 GHz
5.65 GHz
5.80 GHz
Units
Small Signal Gain
9.5
10.0
9.5
dB
EVM at P_AVE = 29 dBm
1.1
0.9
EVM at P_AVE = 36 dBm
2.2
1.4
Drain Efficiency at P_AVE = 4 W
23
24
Input Return Loss
10.8
22
0.9
%
1.4
%
25
%
9.3
dB
Note:
Measured in the CGH55030-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Features
• 300 MHz Instantaneous Bandwidth
• 30 W Peak Power Capability
• 10 dB Small Signal Gain
• 4 W P_AVE < 2.0 % EVM
• 25 % Efficiency at 4 W Average Power
• Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications
• Designed for Multi-carrier DOCSIS Applications
Subject to change without notice.
www.cree.com/rf
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