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| CGH55015F2 Datasheet, PDF (1/11 Pages) Cree, Inc – 10 W, C-band, Unmatched, GaN HEMT | |||
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CGH55015F2 / CGH55015P2
10 W, C-band, Unmatched, GaN HEMT
Creeâs CGH55015F2/CGH55015P2 is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and wide
bandwidth capabilities, which makes the CGH55015F2/CGH55015P2 ideal for
C-band pulsed or CW saturated amplifiers. The transistor is available in both screw-
down, flange and solder-down, pill packages. Based on appropriate external match
adjustment, the CGH55015F2/CGH55015P2 is suitable for applications up to 6
GHz.
PPNa:cCkGagHe5T5y0p1e5:P4240&1C9G6H&554041051F626
FEATURES
⢠4.5 to 6.0 GHz Operation
⢠12 dB Small Signal Gain at 5.65 GHz
⢠13 W typical PSAT
⢠60 % Efficiency at PSAT
⢠28 V Operation
APPLICATIONS
⢠2-Way Private Radio
⢠Broadband Amplifiers
⢠Cellular Infrastructure
⢠Test Instrumentation
⢠Class A, AB Amplifiers for Drivers and Gain
Blocks
Subject to change without notice.
www.cree.com/wireless
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