CGH55015F1 Datasheet, PDF (1/13 Pages) Cree, Inc – 15 W, 5500-5800 MHz, GaN HEMT for WiMAX

CGH55015F1 / CGH55015P1
15 W, 5500-5800 MHz, GaN HEMT for WiMAX
Cree’s CGH55015F1/CGH55015P1 is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth
capabilities, which makes the CGH55015F1/CGH55015P1 ideal for 5.5-5.8 GHz WiMAX
and linear amplifier applications. The transistor is available in both screw-down, flange
and solder-down, pill packages. Based on appropriate external match adjustment, the
CGH55015F1/CGH55015P1 is suitable for 4.9 - 5.5 GHz applications as well.
PPNa:cCkGagHe5T5y0p1e5:P4140&1C9G6H&554041051F616
Typical Performance 5.5-5.8GHz (T_C = 25˚C)
Parameter
5.50 GHz
Small Signal Gain
10.7
5.65 GHz
11.0
5.80 GHz
10.7
EVM at P_AVE = 23 dBm
EVM at P_AVE = 33 dBm
Drain Efficiency at P_AVE = 33 dBm
Input Return Loss
1.9
1.5
25
11.5
1.8
1.5
25
14.5
2.0
1.7
25
10.5
Note:
Measured in the CGH55015-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Units
dB
%
%
%
dB
Features
• 5.5 - 5.8 GHz Operation
• 15 W Peak Power Capability
• >10.5 dB Small Signal Gain
• 2 W P_AVE < 2.0 % EVM
• 25 % Efficiency at 2 W Average Power
• Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications
• Designed for Multi-carrier DOCSIS Applications
Subject to change without notice.
www.cree.com/wireless
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