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| CGH40180PP Datasheet, PDF (1/13 Pages) Cree, Inc – 180 W, RF Power GaN HEMT | |||
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CGH40180PP
180 W, RF Power GaN HEMT
Creeâs CGH40180PP is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efficiency, high gain and
wide bandwidth capabilities making the CGH40180PP ideal for linear
and compressed amplifier circuits. The transistor is available in a 4-lead
flange package.
PackaPgNe:TCyGpeHs4:04148001P9P9
FEATURES
⢠Up to 2.5 GHz Operation
⢠20 dB Small Signal Gain at 1.0 GHz
⢠15 dB Small Signal Gain at 2.0 GHz
⢠220 W typical PSAT
⢠70 % Efficiency at PSAT
⢠28 V Operation
APPLICATIONS
⢠2-Way Private Radio
⢠Broadband Amplifiers
⢠Cellular Infrastructure
⢠Test Instrumentation
⢠Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
www.cree.com/rf
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