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| CGH40120P Datasheet, PDF (1/12 Pages) Cree, Inc – 120 W, RF Power GaN HEMT | |||
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CGH40120P
120 W, RF Power GaN HEMT
Creeâs CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility
transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general
purpose, broadband solution to a variety of RF and microwave applications. GaN
HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the
CGH40120P ideal for linear and compressed amplifier circuits. The transistor is
available in a metal-ceramic pill package.
PackagPeNT:yCpGesH: 4404102200P6
FEATURES
⢠Up to 2.5 GHz Operation
⢠20 dB Small Signal Gain at 1.0 GHz
⢠15 dB Small Signal Gain at 2.0 GHz
⢠120 W Typical PSAT
⢠70 % Efficiency at PSAT
⢠28 V Operation
APPLICATIONS
⢠2-Way Private Radio
⢠Broadband Amplifiers
⢠Cellular Infrastructure
⢠Test Instrumentation
⢠Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
www.cree.com/rf
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