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| CGH40120F Datasheet, PDF (1/13 Pages) Cree, Inc – 120 W, RF Power GaN HEMT | |||
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CGH40120F
120 W, RF Power GaN HEMT
Creeâs CGH40120F is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGH40120F, operating from a 28 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efficiency, high gain and
wide bandwidth capabilities making the CGH40120F ideal for linear and
compressed amplifier circuits. The transistor is available in a flange
package.
PackagPeNT:yCpeGsH: 4404102109F3
FEATURES
⢠Up to 2.5 GHz Operation
⢠20 dB Small Signal Gain at 1.0 GHz
⢠15 dB Small Signal Gain at 2.0 GHz
⢠120 W Typical PSAT
⢠70 % Efficiency at PSAT
⢠28 V Operation
APPLICATIONS
⢠2-Way Private Radio
⢠Broadband Amplifiers
⢠Cellular Infrastructure
⢠Test Instrumentation
⢠Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
www.cree.com/rf
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