CGH40090PP Datasheet, PDF (1/13 Pages) Cree, Inc – 90 W, RF Power GaN HEMT

CGH40090PP
90 W, RF Power GaN HEMT
Cree’s CGH40090PP is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efficiency, high gain and
wide bandwidth capabilities making the CGH40090PP ideal for linear
and compressed amplifier circuits. The transistor is available in a 4-lead
flange package.
PackaPgNe:TCyGpeHs4:04049001P9P9
Typical Performance Over 500 MHz - 2.5 GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
500 MHz
1.0 GHz
1.5 GHz
2.0 GHz
2.5 GHz
Small Signal Gain
17.6
15.6
14.1
12.4
12.4
Gain at P_SAT
Saturated Power
13.7
11.7
9.2
7.0
10.4
66.8
102.7
91.4
101.7
57.0
Drain Efficiency at P_SAT
Input Return Loss
48.5
57.0
56.6
59.2
37.3
7.3
23.0
14.9
14.3
11.3
Units
dB
dB
W
%
dB
Features
• Up to 2.5 GHz Operation
• 16 dB Small Signal Gain at 2.0 GHz
• 100 W Typical P_SAT
• 55 % Efficiency at P_SAT
• 28 V Operation
Subject to change without notice.
www.cree.com/rf
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