CGH40025F Datasheet, PDF (1/12 Pages) Cree, Inc – 25 W, RF Power GaN HEMT

PRELIMINARY
CGH40025F
25 W, RF Power GaN HEMT
Cree’s CGH40025 is an unmatched, gallium nitride (GaN) high
electron mobility transistor (HEMT). The CGH40025, operating
from a 28 volt rail, offers a general purpose, broadband solution
to a variety of RF and microwave applications. GaN HEMTs offer
high efficiency, high gain and wide bandwidth capabilities making
the CGH40025 ideal for linear and compressed amplifier circuits.
The transistor is available in a screw-down, flange package.
PackagPeNT:yCpGe:H4404002156F6
FEATURES
• Up to 4 GHz Operation
• 16 dB Small Signal Gain at 2.0 GHz
• 13 dB Small Signal Gain at 4.0 GHz
• 30 W typical P_3dB
• 62 % Efficiency at P3dB
• 28 V Operation
APPLICATIONS
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
Subject to change without notice.
www.cree.com/wireless