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| CGH40025 Datasheet, PDF (1/14 Pages) Cree, Inc – 25 W, RF Power GaN HEMT | |||
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CGH40025
25 W, RF Power GaN HEMT
Creeâs CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility
transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general
purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities
making the CGH40025 ideal for linear and compressed amplifier circuits. The
transistor is available in a screw-down, flange package and solder-down, pill
packages.
PPacNk:aCgGeHT4y0p0e2: 454P0a1n9d6CaGndH4404002156F6
FEATURES
⢠Up to 6 GHz Operation
⢠15 dB Small Signal Gain at 2.0 GHz
⢠13 dB Small Signal Gain at 4.0 GHz
⢠30 W typical PSAT
⢠62 % Efficiency at PSAT
⢠28 V Operation
APPLICATIONS
⢠2-Way Private Radio
⢠Broadband Amplifiers
⢠Cellular Infrastructure
⢠Test Instrumentation
⢠Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
www.cree.com/wireless
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