CGH40010_15 Datasheet, PDF (1/15 Pages) Cree, Inc – 10 W, RF Power GaN HEMT

CGH40010
10 W, RF Power GaN HEMT
Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGH40010, operating from a 28 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efficiency, high gain and
wide bandwidth capabilities making the CGH40010 ideal for linear and
compressed amplifier circuits. The transistor is available in both screw-
down, flange and solder-down, pill packages.
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FEATURES
• Up to 6 GHz Operation
• 16 dB Small Signal Gain at 2.0 GHz
• 14 dB Small Signal Gain at 4.0 GHz
• 13 W typical P_SAT
• 65 % Efficiency at P_SAT
• 28 V Operation
APPLICATIONS
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
www.cree.com/wireless
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