CGH40010 Datasheet, PDF (1/12 Pages) Cree, Inc – 10 W, RF Power GaN HEMT

PRELIMINARY
CGH40010
10 W, RF Power GaN HEMT
Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high
electron mobility transistor (HEMT). The CGH40010, operating
from a 28 volt rail, offers a general purpose, broadband solution
to a variety of RF and microwave applications. GaN HEMTs offer
high efficiency, high gain and wide bandwidth capabilities making
the CGH40010 ideal for linear and compressed amplifier circuits.
The transistor is available in both screw-down, flange and solder-
down, pill packages.
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FEATURES
• Up to 4 GHz Operation
• 16 dB Small Signal Gain at 2.0 GHz
• 14 dB Small Signal Gain at 4.0 GHz
• 13 W typical P_3dB
• 65 % Efficiency at P3dB
• 28 V Operation
APPLICATIONS
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
Subject to change without notice.
www.cree.com/wireless