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| CGH40006S Datasheet, PDF (1/16 Pages) Cree, Inc – 6 W, RF Power GaN HEMT, Plastic | |||
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CGH40006S
6 W, RF Power GaN HEMT, Plastic
Creeâs CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility
transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general
purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs
offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006S
ideal for linear and compressed amplifier circuits. The transistor is available in a 3mm
x 3mm, surface mount, quad-flat-no-lead (QFN) package.
PackaPgNeâsT:yCpeGsH: 4404000260S3
FEATURES
⢠Up to 6 GHz Operation
⢠13 dB Small Signal Gain at 2.0 GHz
⢠11 dB Small Signal Gain at 6.0 GHz
⢠8 W typical at PIN = 32 dBm
⢠65 % Efficiency at PIN = 32 dBm
⢠28 V Operation
⢠3mm x 3mm Package
APPLICATIONS
⢠2-Way Private Radio
⢠Broadband Amplifiers
⢠Cellular Infrastructure
⢠Test Instrumentation
⢠Class A, AB, Linear amplifiers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Subject to change without notice.
www.cree.com/wireless
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