CGH35240F Datasheet, PDF (1/12 Pages) Cree, Inc – 240 W, 3100-3500 MHz, 50-ohm Input/

CGH35240F
240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGH35240F ideal for 3.1-3.5GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package.
PackaPgeN:TCypGeH: _3454204200F1
Typical Performance Over 3.1-3.5GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
3.1 GHz
3.2 GHz
3.3 GHz
3.4 GHz
Output Power
250
240
225
225
3.5 GHz
220
Units
W
Gain
12.1
11.9
11.6
11.5
11.4
dB
Power Added Efficiency
60
59
57
52
48
%
Note:
Measured in the CGH35240F-AMP amplifier circuit, under 300 μs pulse width, 20% duty cycle, P_IN = 42 dBm.
Features
• 3.1 - 3.5 GHz Operation
• 240 W Typical Output Power
• 11.6 dB Power Gain at P_IN = 42.0 dBm
• 57 % Typical Power Added Efficiency
• 50 Ohm Internally Matched
• <0.2 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/wireless
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