CGH35060F2 Datasheet, PDF (1/11 Pages) Cree, Inc – 60 W, 3100-3500 MHz, 28V, GaN HEMT

CGH35060F2 / CGH35060P2
60 W, 3100-3500 MHz, 28V, GaN HEMT
Cree’s CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth
capabilities, which makes the CGH35060F2 / P2 ideal for 3.1-3.5 GHz S-band pulsed
amplifier applications. The transistor is supplied in a ceramic/metal flange and pill
package.
PPNa: ^{cCkGaHge35T0y6p0eF: 424&01C9G3H&354046002P026}
Typical Performance Over 3.1-3.5 GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
3.1 GHz
3.3 GHz
3.5 GHz
Small Signal Gain
12.0
13.2
11.5
P_{OUT @} P_IN = 36.5 dBm
47.0
47.6
46.7
P_{OUT @} P_IN = 36.5 dBm
10.4
11.06
10.1
Drain Efficiency @ P_IN = 36.5 dBm
55.0
62.0
62.0
Input Return Loss
-7.3
-17.0
-4.3
Note:
Measured in the CGH35060F2-AMP1 amplifier circuit, under 100 µsec Pulse Width, 20% Duty Cycle and 28 V.
Units
dB
dBm
dBm
%
dB
Features
• 3.1 - 3.5 GHz Operation
• 60 W Peak Power Capability
• 12 dB Small Signal Gain
• 60 % Drain Efficiency
Subject to change without notice.
www.cree.com/rf
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