CGH35030F_15 Datasheet, PDF (1/12 Pages) Cree, Inc – 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX

CGH35030F
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically for high efficiency, high gain and wide bandwidth capabilities,
which makes the CGH35030F ideal for 3.3-3.9GHz WiMAX and BWA amplifier
applications. The transistor is supplied in a ceramic/metal flange package.
PackaPgeN:TCypGeH: _3454003106F6
Typical Performance Over 3.3-3.8GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
3.3 GHz
3.4 GHz
3.5 GHz
3.6 GHz
3.7 GHz
Small Signal Gain
11.6
11.8
11.8
12.0
12.4
3.8 GHz
13.0
EVM at P_AVE = 23 dBm
EVM at P_AVE = 36 dBm
Drain Efficiency @ 36 dBm
2.42
1.97
20.8
2.26
1.74
21.9
2.09
1.68
23.5
2.11
1.79
25.4
2.13
2.01
27.4
2.38
2.37
29.1
Input Return Loss
12.3
8.5
6.1
5.4
6.1
9.0
Note:
Measured in the CGH35030F-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Units
dB
%
%
%
dB
Features
• 3.3 - 3.9 GHz Operation
• 30 W Peak Power Capability
• 12 dB Small Signal Gain
• 4.0 W P_AVE at < 2.0 % EVM
• 25 % Drain Efficiency at 4 W P_AVE
• WiMAX Fixed Access 802.16-2004 OFDM
• WiMAX Mobile Access 802.16e OFDMA
Subject to change without notice.
www.cree.com/RF
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