CGH35030F Datasheet, PDF (1/8 Pages) Cree, Inc – 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX

PRELIMINARY
CGH35030F
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH35030F is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and
wide bandwidth capabilities, which makes the CGH35030F ideal for 3.3-
3.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
in a ceramic/metal flange package.
PackagPeNT:yCpGe:H3454003106F6
Typical Performance Over 3.3-3.7GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
3.3 GHz
3.4 GHz
3.5 GHz
3.6 GHz
3.7 GHz
Small Signal Gain
10.9
11.1
10.9
10.7
10.8
Units
dB
EVM @ 36 dBm
1.9
1.9
1.9
2.0
2.0
%
Drain Efficiency @ 36 dBm
20.8
20.8
21.6
22.7
23.9
%
Input Return Loss
11.4
8.2
5.3
4.0
3.7
dB
Note:
Measured in the CGH35030F-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64
QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Features
• 3.3 - 3.9 GHz Operation
• >11 dB Small Signal Gain
• 2.0 % EVM at 4 W P_OUT
• 23 % Efficiency at 4 W P_OUT
• 3.7˚C/W Typical thermal resistance under 4.0 W P_AVE OFDM
• WiMAX Fixed Access 802.16-2004 OFDM
Subject to change without notice.
www.cree.com/wireless