CGH35015F Datasheet, PDF (1/9 Pages) Cree, Inc – 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX

PRELIMINARY
CGH35015F
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH35015F is a gallium nitride (GaN) high electron mobility
transistor designed specifically for 802.16-2004 WiMAX Fixed Access
applications. GaN HEMTs offer high efficiency, high gain and wide
bandwidth capabilities, which makes the CGH35015F ideal for 3.3-3.9GHz
WiMAX and BWA amplifier applications. The transistor is available in a
flange package.
PackagPeNT:yCpGe:H3454001156F6
Typical Performance 3.4-3.9GHz (T_C = 25˚C)
Parameter
Gain @ P_OUT = 2 W
P_OUT @ 2.0 % EVM
Drain Efficiency @ 2.0 % EVM
3.4 GHz
11.6
33.0
23.0
3.5 GHz
11.8
33.0
23.0
3.6 GHz
12.0
33.0
24.0
3.8 GHz
11.8
33.5
18.0
3.9 GHz
11.2
33.5
17.0
Units
dB
dBm
%
Input Return Loss
4.0
4.5
6.0
13.0
9.0
dB
Note:
Measured in the CGH35015F-TB amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64
QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Features
• 3.3 - 3.9 GHz Operation
• >11 dB Small Signal Gain
• >2.0 W P_OUT at 2.0 % EVM
• 24 % Efficiency at 2.0 W P_OUT
• 15 W Typical P_3dB
• WiMAX Fixed Access 802.16-2004 OFDM
Subject to change without notice.
www.cree.com/wireless