CGH35015 Datasheet, PDF (1/12 Pages) Cree, Inc – 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX

CGH35015
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH35015 is a gallium nitride (GaN) high electron mobility transistor designed
specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer
high efficiency, high gain and wide bandwidth capabilities, which makes the
CGH35015 ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The
transistor is available in both screw-down, flange and solder-down, pill packages.
PPacNk:aCgGeHT3y5p0e1: _{454F0a1n6d6CaGnHd3454001159P6}
Typical Performance Over 3.3-3.8GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
3.3 GHz
3.4 GHz
3.5 GHz
3.6 GHz
3.7 GHz
3.8 GHz
Units
Small Signal Gain
13.6
12.8
12.3
12.2
12.3
12.8
dB
EVM at P_AVE = 24 dBm
2.71
2.31
2.1
2.12
2.54
3.04
dBm
EVM at P_AVE = 33 dBm
2.63
2.29
1.93
1.70
1.70
2.14
dBm
Drain Efficiency at P_AVE = 33 dBm
24.0
25.5
26.1
25.6
23.8
2.38
%
Note:
Measured in the CGH35015F-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Features
• 3.3 - 3.9 GHz Operation
• 15 W Peak Power Capability
• 12 dB Small Signal Gain
• 2.0 W P_AVE at < 2.0 % EVM
• 26 % Efficiency at 2 W Average Power
• WiMAX Fixed Access 802.16-2004 OFDM
• WiMAX Mobile Access 802.16e OFDMA
Subject to change without notice.
www.cree.com/wireless
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