CGH31240F Datasheet, PDF (1/12 Pages) Cree, Inc – 240 W, 2700-3100 MHz, 50-ohm Input

CGH31240F
240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package.
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Typical Performance Over 2.7-3.1 GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
2.7 GHz
2.8 GHz
2.9 GHz
3.0 GHz
Output Power
243
249
249
245
3.1 GHz
243
Units
W
Gain
11.9
11.9
11.9
11.9
11.9
dB
Power Added Efficiency
60
61
60
59
52
%
Note:
Measured in the CGH31240F-AMP amplifier circuit, under 300 μs pulse width, 20% duty cycle, P_IN = 42 dBm.
Features
• 2.7 - 3.1 GHz Operation
• 12 dB Power Gain
• 60 % Power Added Efficiency
• < 0.2 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/rf
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