CGH27060F_15 Datasheet, PDF (1/12 Pages) Cree, Inc – 60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz

CGH27060F
60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz
Cree’s CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically for high efficiency, high gain and wide bandwidth capabilities, which
makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA
amplifier applications. The unmatched transistor is supplied in a ceramic/metal flange
package.
Packa_{PgeN:TCypGeH: 2474006109F3}
Typical Performance Over 2.3-2.7GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
2.3 GHz
2.4 GHz
2.5 GHz
2.6 GHz
Small Signal Gain
15.1
14.7
14.3
14.3
2.7 GHz
14.5
Units
dB
EVM @ 39 dBm
2.35
2.16
2.01
2.13
2.82
%
Drain Efficiency @ 39 dBm
28.3
27.6
27.3
26.7
26.3
%
Input Return Loss
10.0
7.3
6.0
7.0
10.3
dB
Note:
Measured in the CGH27060F-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Features
• VHF - 3.0 GHz Operation
• 14 dB Small Signal Gain
• 8.0 W P_AVE at < 2.0 % EVM
• 27 % Drain Efficiency at 8 W Average Power
• WiMAX Fixed Access 802.16-2004 OFDM
• WiMAX Mobile Access 802.16e OFDMA
Subject to change without notice.
www.cree.com/rf
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