CGH27060F Datasheet, PDF (1/8 Pages) Cree, Inc – 60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX

PRELIMINARY
CGH27060F
60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH27060F is a gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth
capabilities, which makes the CGH27060F ideal for 2.3-2.9GHz WiMAX and
BWA amplifier applications. The transistor is supplied in a ceramic/metal
flange package.
PackagPeNT:yCpGe:H2474006109F3
Typical Performance Over 2.3-2.6GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
2.3 GHz
2.4 GHz
2.5 GHz
2.6 GHz
Small Signal Gain
13.5
13.3
13.0
12.9
Units
dB
EVM @ 39 dBm
2.1
1.9
1.9
2.2
%
Drain Efficiency @ 39 dBm
24.2
23.8
22.5
22.3
%
Input Return Loss
9.8
16.0
7.7
5.9
dB
Note:
Measured in the CGH27060F-TB amplifier circuit, under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Features
• 2.3 - 2.9 GHz Operation
• >13 dB Small Signal Gain
• 2.0 % EVM at 8 W P_OUT
• 23 % Efficiency at 8 W P_OUT
• 2.7˚C/W Typical thermal resistance under 8.0 W P_AVE OFDM
• WiMAX Fixed Access 802.16-2004 OFDM
• WiMAX Mobile Access 802.16e OFDMA
Subject to change without notice.
www.cree.com/wireless