CGH27030S Datasheet, PDF (1/16 Pages) Cree, Inc – 30 W, DC - 6.0 GHz, 28 V, GaN HEMT

CGH27030S
30 W, DC - 6.0 GHz, 28 V, GaN HEMT
Cree’s CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities,
which makes the CGH27030S ideal for LTE, 4G Telecom and BWA amplifier applications. The
CGH27030S operates from a 28 volt rail. The transistor is available in a 3mm x 4mm, surface
mount, dual-flat-no-lead (DFN) package.
PackagPeNT:yCpGe:H32x740D3F0NS
Typical Performance 1.8 - 2.2 GHz (T_C = 25˚C) , 28 V
Parameter
1.8 GHz
Small Signal Gain
20.0
2.0 GHz
20.4
Adjacent Channel Power @ P_OUT =5 W
Drain Efficiency @ P_OUT = 5 W
Input Return Loss
-39.5
31.8
-4.2
-42.1
32.8
-6.4
Note:
Measured in the CGH27030S-AMP1 application circuit.
Under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH.
Typical Performance 2.3 - 2.7 GHz (T_C = 25˚C) , 28 V
Parameter
2.3 GHz
Small Signal Gain
21.1
2.5 GHz
20.6
Adjacent Channel Power @ P_OUT =3.2 W
-32.0
-36.4
Drain Efficiency @ P_OUT = 3.2 W
37.8
36.2
Input Return Loss
-7.3
-7.9
Note:
Measured in the CGH27030S-AMP2 application circuit.
Under 7.5 dB PAR single carrier WCDMA signal test model 1 with 64 DPCH.
2.2 GHz
19.5
-39.1
33.8
-7.7
2.7 GHz
20.0
-33.6
35.0
-7.2
Units
dB
dBc
%
dB
Units
dB
dBc
%
dB
Features for 28 V in CGH27030S-AMP1
Features for 28 V in CGH27030S-AMP2
• 1.8 - 2.2 GHz Operation
• 30 W Typical Output Power
• 18 dB Gain at 5 W P_AVE
• -39 dBc ACLR at 5 W P_AVE
• 33% efficiency at 5 W P_AVE
• High degree of APD and DPD correction can be
applied
• 2.3 - 2.7 GHz Operation
• 30 W Typical Output Power
• 18.5 dB Gain at 5 W P_AVE
• -39 dBc ACLR at 5 W P_AVE
• 36% efficiency at 5 W P_AVE
• High degree of APD and DPD correction can be
applied
Subject to change without notice.
www.cree.com/rf
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