CGH27030F_15 Datasheet, PDF (1/12 Pages) Cree, Inc – 30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz

CGH27030
30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
Cree’s CGH27030 is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and
wide bandwidth capabilities, which makes the CGH27030 ideal for VHF,
Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications.
The unmatched transistor is available in both screw-down, flange and
solder-down, pill packages.
PPacNk:aCgGeHT2y7p0e3: _{404P0a1n9d6CaGndH2474003106F6}
Typical Performance Over 2.3-2.7GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
2.3 GHz
2.4 GHz
2.5 GHz
2.6 GHz
2.7 GHz
Units
Small Signal Gain
15.6
15.5
15.3
15.1
15.2
dB
EVM at P_AVE = 36 dBm
Drain Efficiency at 36 dBm
1.73
1.85
1.85
1.77
1.43
%
28.1
28.7
28.9
27.9
27.5
%
Input Return Loss
6.6
6.2
6.0
6.1
7.0
dB
Note:
Measured in the CGH27030F-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Features
• VHF - 3.0 GHz Operation
• 30 W Peak Power Capability
• 15 dB Small Signal Gain
• 4.0 W P_AVE at < 2.0 % EVM
• 28 % Drain Efficiency at 4 W Average Power
• WiMAX Fixed Access 802.16-2004 OFDM
• WiMAX Mobile Access 802.16e OFDMA
Subject to change without notice.
www.cree.com/rf
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