CGH27030F Datasheet, PDF (1/8 Pages) Cree, Inc – 30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX

PRELIMINARY
CGH27030F
30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH27030F is a gallium nitride (GaN) high electron mobility
transistor (HEMT) designed specifically for high efficiency, high gain and
wide bandwidth capabilities, which makes the CGH27030F ideal for 2.3-
2.9GHz WiMAX and BWA amplifier applications. The transistor is supplied
in a ceramic/metal flange package.
PackagPeNT:yCpGe:H2474003106F6
Typical Performance Over 2.3-2.7GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
2.3 GHz
2.4 GHz
2.5 GHz
2.6 GHz
2.7 GHz
Small Signal Gain
14.1
13.8
13.5
13.2
13.0
Units
dB
EVM @ 21 dBm
2.3
2.1
1.7
1.7
1.9
%
EVM @ 36 dBm
1.7
1.7
1.8
1.8
2.0
%
Drain Efficiency @ 36 dBm
26.0
26.2
26.0
25.8
25.7
%
Input Return Loss
7.9
7.2
6.6
6.4
7.2
dB
Note:
Measured in the CGH27030F-TB amplifier circuit, under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Features
• 2.3 - 2.9 GHz Operation
• >13.5 dB Small Signal Gain
• 26 % Drain Efficiency at 4 W P_OUT
• 3.7˚C/W Typical thermal resistance under 4.0 W P_AVE OFDM
• WiMAX Fixed Access 802.16-2004 OFDM
• WiMAX Mobile Access 802.16e OFDMA
Subject to change without notice.
www.cree.com/wireless