CGH27015F Datasheet, PDF (1/8 Pages) Cree, Inc – 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX

PRELIMINARY
CGH27015F
15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH27015 is a gallium nitride (GaN) high electron mobility transistor
designed specifically for high efficiency, high gain and wide bandwidth
capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX
and BWA amplifier applications. The transistor is available in ceramic,
metal flange package.
PackagPeNT:yCpGe:H2474001156F6
Typical Performance 2.4-2.7 GHz (T_C = 25˚C)
Parameter
2.4 GHz
2.5 GHz
Small Signal Gain
14.5
14.5
2.6 GHz
14.5
2.7 GHz
14.5
Units
dB
P_OUT @ 2.0 % EVM
Drain Efficiency @ 2.0 % EVM
34.0
23.0
34.0
24.0
34.0
24.0
34.0
23.0
dBm
%
Input Return Loss
7.0
6.0
5.0
5.0
dB
Output Return Loss
5.0
6.0
7.0
7.0
dB
Note:
Measured in the CGH27015F-TB amplifier circuit, under 802.16-2004 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3.
Features
• 2.3 - 2.9 GHz Operation
• >14.5 dB Small Signal Gain
• >2.0 W P_OUT at 2.0 % EVM
• 25 % Efficiency at 2.5 % EVM
• WiMAX Fixed Access 802.16-2004 OFDM
• WiMAX Mobile Access 802.16e OFDMA
Subject to change without notice.
www.cree.com/wireless