CGH27015 Datasheet, PDF (1/12 Pages) Cree, Inc – 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz

CGH27015
15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
Cree’s CGH27015 is a gallium nitride (GaN) high electron mobility transistor designed
specifically for high efficiency, high gain and wide bandwidth capabilities, which makes
the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier
applications. The unmatched transistor is available in both screw-down, flange and
solder-down, pill packages.
PPacNk:aCgGeHT2y7p0e1: _{454F0a1n6d6CaGnHd2474001159P6}
Typical Performance 2.3-2.7 GHz (T_C = 25˚C)
Parameter
2.3 GHz
2.4 GHz
Small Signal Gain
16.9
16.0
2.5 GHz
15.1
2.6 GHz
14.6
2.7 GHz
14.3
EVM at P_AVE = 33 dBm
1.69
1.51
1.50
1.66
1.93
Drain Efficiency at P_AVE = 33 dBm
27.1
27.8
28.4
28.0
28.0
Note:
Measured in the CGH27015F-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Units
dB
%
dB
Features
• VHF - 3.0 GHz Operation
• 15 W Peak Power Capability
• 14.5 dB Small Signal Gain
• 2 W P_AVE < 2.0 % EVM
• 28 % Efficiency at 2 W Average Power
• Designed for WiMAX Fixed Access 802.16-2004 OFDM Applications
• Designed for WiMAX Mobile Access 802.16e OFDMA Applications
Subject to change without notice.
www.cree.com/rf
1