CGH21240F Datasheet, PDF (1/15 Pages) Cree, Inc – 240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX

CGH21240F
240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX
Cree’s CGH21240F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGH21240F ideal for
1.8-2.3GHz WCDMA and LTE amplifier applications. The transistor is supplied in a
ceramic/metal flange package.
PackaPgeN:TCypGeH: _2414204101F7
Typical Performance Over 2.0-2.3GHz (T_C = 25˚C) of Demonstration Amplifier
Parameter
2.0 GHz
2.1 GHz
2.2 GHz
2.3 GHz
Units
Gain @ 46 dBm
13.1
14.6
15.1
15.7
dB
ACLR @ 46 dBm
-36.5
-34.5
-34.2
-32.0
dBc
Drain Efficiency @ 46 dBm
30.5
32.7
32.9
33.8
%
Note:
Measured in the CGH21240F-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 67% clipping,
PAR = 8.81 dB @ 0.01 % Probability on CCDF.
Features
• 1.8 - 2.3 GHz Operation
• 15 dB Gain
• -35 dBc ACLR at 40 W P_AVE
• 33 % Efficiency at 40 W P_AVE
• High Degree of DPD Correction Can be Applied
Subject to change without notice.
www.cree.com/wireless
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